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High Density NAND Flash Memory for Space Applications

Our advanced High-Density NAND Flash Memory solutions address the increasing need for large-capacity, reliable data storage in space systems. Utilizing Triple-Level Cell (TLC) technology, these devices store three bits per cell, enabling significantly greater density compared to traditional Single-Level Cell (SLC) memories. However, this increase in capacity comes at the cost of reduced endurance and greater sensitivity to errors, which must be managed through advanced error correction and wear-leveling techniques.

In space environments, commercial TLC NAND is vulnerable to radiation-induced errors such as Total Ionizing Dose (TID) effects and Single-Event Effects (SEE), risking data corruption or device latch-up. Our high-density NAND Flash addresses these challenges by operating in programmed SLC (p-SLC) mode, significantly improving endurance and radiation hardness while maintaining high storage capacity. The devices exhibit strong immunity to Single-Event Latch-up (SEL) with LET thresholds above 62.5 MeV·cm²/mg, tolerate TID levels up to 30 krad(Si), and support up to 60,000 program/erase cycles. Designed for seamless integration into aerospace systems, they comply with ONFI 4.2 standards and support NV-DDR3 interfaces at speeds up to 600 MHz.

Packaged in space-qualified, these memory modules are ideal for onboard recorders, satellite payload data storage, and other mission-critical aerospace applications.

First Engineering Models available in Q4 2025

Key features

  • ONFI 4.2 compliance

    Support for NV-DDR3 interface at frequencies up to 600 MHz

     

  • 60, 000 program/erase cycles capability (p-SLC mode)

    5 years data retention (SLC mode)

  • Radiation tolerance (p-SLC mode):

    TID > 30 krad (Si)

    SEL LETth > 62.5 MeV.cm²/mg

    SEU LETth < 32.4 MeV.cm²/mg ;
    σsat = 2E-10 cm²/bit

  • Available in all 3D PLUS screening and qualification options:

    Commercial (C )

    Industrial (I)

    Space qualified (S)

  • Fast read page time of 40 μs (typical)

    Program page time around 600 μs

    Erase block time about 8 ms

  • No pure tin guarantee

    Worldwide delivery guarantee

Line Up High Density Nand Flash 3DFN8T16LB2821

Line Up

Each 3D PLUS standard product and SiP solution are defined by a specific part number based on the part number decoder provided below. The ordering information consist as a minimum of the following 3 items for fully define a product:

  • The product’s Part Number
  • The temperature range
  • The  screening level

For High Reliability products or SiPs for Aerospace applications, a Source Control Drawing (SCD#) referenced 3DPA-xxxx is available for each product. It shall be used for its procurement in addition to other ordering information.
 
Memory Part Number Decoder

Density Part Number Description Package Temperature
 4 Tb 3DFN4T16LB1862 512G x8
Asynchronous/Synchronous
BGA XXX -40 °C to +105 °C
8 Tb 3DFN8T16LB2821 512G x8
Asynchronous/Synchronous
BGA XXX -40 °C to +105 °C

 

Design Tools 3DFN4T16LB1862 High Density NAND Flash

Design Tools

4 Tb

3DFN4T16LB1862 - Assembly Recommendations - 0 ko Télécharger
3DFN4T16LB1862 - Footprint - 0 ko Télécharger

8 Tb

3DFN8T16LB2821 - Assembly Recommendations - 0 ko Télécharger
3DFN8T16LB2821 - Footprint - 0 ko Télécharger

Documentation

Density Part Number Flyer / Data sheet
4 Tb 3DFN4T16LB1862 Flyer / Data sheet PDF - 498ko Télécharger
8 Tb 3DFN8T16LB2821 Flyer / Data sheet PDF - 889ko Télécharger