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Space memory MNEMOSYNE

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  • MNEMOSYNE
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Overview: MNEMOSYNE A SPACE NON-VOLATILE MEMORY ASIC

MNEMOSYNE aka the memory goddess is a non volatile memory ASIC derived from a project with the same name. The MNEMOSYNE project funded by EU’s program H2020 and launched in 2019 aimed to develop a non volatile memory ASIC with serial interface designed space constraints, with guaranteed supply chain (entirely manufactured in Europe). The memory ASIC designed was cross validated by a consortium of radiation effects and space electronics experts. More details on the EU project follow the link here

MNEMOSYNE space grade modules are stacks of SEE (latch-up, upset, SEFI, transient) immune ASICs designed with the 22 nm STT-MRAM FDSOI process. Our radiation tolerant modules feature high density, high endurance, long time data retention and serial or parallel interface. The modules are offered in SOP or BGA package for high resistance Surface Mount (SMT) assembly and for withstanding harsh thermal and mechanical environments.

The Release to the market is scheduled for Q4’2023. MNEMOSYNE products are the best in class regarding reliability and density. They are perfectly suited for being used as configuration solution for the latest SRAM-based FPGAs or as boot/program code storage for leading processors.

Key features

  • Interfaces (only one at time):

    Serial

    Parallel

  • Modes supported:

    SPI, DSPI, QSPI, OSPI for serial interface

    EEPROM for parallel interface

  • Voltage supply:

    1.8 V

    1.8 V & 3.3 V

  • Radiation Performances:

    TID > 100 krad(Si)

    SEL LETth > 60 MeV.cm²/mg @ 125 °C

    SEU LETth > 60 MeV.cm²/mg

    SET LETth > 60 MeV.cm²/mg

    SEFI LETth > 60 MeV.cm²/mg

  • Operating temperature: -55 °C to +125 °C

    Endurace: 100, 000 P/E cycles

    Data retention: 20 years

    Embedded ECC

  • Worldwide Delivery Guaranty

Key Benefits

  • Space grade high density configuration memory –
    Up to 1 Gb of SEE Immune Storage

  • Best in class regarding reliability
    (data retention, P/E cycles, radiation)

  • Ease customers life with
    additional features for
    error management strategy
    (ECC_flag, errors counters)

Line Up

MNEMOSYNE Space Memory ASIC Line Up

Each 3D PLUS standard product and SiP solution are defined by a specific part number based on the part number decoder provided below. The ordering information consist as a minimum of the following 3 items for fully define a product:

  • The product’s Part Number
  • The temperature range
  • The screening level

For High Reliability products or SiPs for Aerospace applications, a Source Control Drawing (SCD#) referenced 3DPA-xxxx is available for each product. It shall be used for its procurement in addition to other ordering information.

 

Memory Part Number Decoder

Density Part Number Description Package Temperature
128 Mb  3DMN128M08VS1852 3.3 V parallel interface SOP 54 -55 °C to +125 °C
512 Mb  3DMN512M08US4853 Up to 100 MHz

1.8 V SPI interface

 SOP 42 -55 °C to +125 °C
1 Gb 3DMN1G08US8854 Up to 100 MHz

1.8 V SPI interface

 SOP 42 -55 °C to +125 °C

Design Tools

Design Tools

128 Mb 3.3 V parallel

3DMN128M08VS1852 - Assembly Recommendations PDF - 805 ko Download

512 Mb 1.8 V SPI

3DMN512M08US4853 - Assembly Recommendations PDF - 805 ko Download
3DMN512M08US4853- Footprint PDF - 856 ko Download

1 Gb 1.8 V SPI

3DMN1G08US8854 - Assembly Recommendations PDF - 805 ko Download
3DMN1G08US8854 - Footprint PDF - 944 ko Download

Documentation

Density Part Number Data Sheet
128 Mb 3.3 V parallel 3DMN128M08VS1852 Data Sheet PDF - 2403ko Download
512 Mb 1.8 V SPI 3DMN512M08US4853 Data Sheet PDF - 2010ko Download
1 Gb 1.8 V SPI 3DMN1G08US8854 Data Sheet PDF - 2010ko Download