NAND FLASH
Overview
NAND FLASH memories are the highest density memories qualified for space applications. 8Gbit to 128Gbit Radiation Tolerant NAND FLASH stacks are available in a variety of temperature ranges, organized x8 and x16, with a power supply of 3.3V.
Based on a very robust SLC NAND FLASH technology, the Radiation Tolerant NAND FLASH stacks feature endurance of 100K Write/Erase cycles per sector and 10 years data retention time.
The devices are offered with standard SOP footprint for high resistance SMT assembly and for withstanding harsh thermal and mechanical environments.
3D PLUS NAND FLASH products are used for Mass data storage in very high density, Non Volatile and very low power Solid State Data Recorders.
Key Features
Very high density – smallest footprint (more than 85 % space savings in the design)
Non volatile and programmable
100K Write/Erase cycles capability
10 years data retention
Radiation tolerance:
- TID: 60 krad(Si)
- SEL > 62.5 MeV.cm²/mg
- SEU: 1.3 MeV.cm²/mg ; Saturated Cross Section: 2E-10 cm²/bit
Space quality level and large Flight heritage worldwide
No pure tin guarantee (less than 97% tin guarantee)
Very long life time electronics (technology proven for 15 to 18 years missions in space)
Worldwide delivery guarantee
Lineup
Part Number | Configuration | Voltage | Clock Rate / Access time | Package | Temperature | SCD# |
---|---|---|---|---|---|---|
3DFN8G08VS1706 | 1G x 8 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6760 |
Part Number | Configuration | Voltage | Clock Rate / Access time | Package | Temperature | SCD# |
---|---|---|---|---|---|---|
3DFN16G08VS1712 | 2G x 8 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6750 |
3DFN16G08VS2705 | 2G x 8 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6770 |
Part Number | Configuration | Voltage | Clock Rate / Access time | Package | Temperature | SCD# |
---|---|---|---|---|---|---|
3DFN32G08US2845 | 4G x 8 | 1.8 V | 12 ns | SOP54 | C, I, M | 3DPA-8284 |
3DFN32G08VS2711 | 4G x 8 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6740 |
3DFN32G08VS4704 | 4G x 8 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6780 |
Part Number | Configuration | Voltage | Clock Rate / Access time | Package | Temperature | SCD# |
---|---|---|---|---|---|---|
3DFN64G08VS4309 | 8G x 8 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6730 |
3DFN64G08VS8695 | 8G x 8 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6790 |
3DFN64G16VS4679 | 4G x 16 | 3.3V | 25 ns | SOP58 | C, I, M | 3DPA-6980 |
3DFN64G16VS8710 | 4G x 16 | 3.3V | 25 ns | SOP58 | C, I, M | 3DPA-6800 |
Part Number | Configuration | Voltage | Clock Rate / Access time | Package | Temperature | SCD# |
---|---|---|---|---|---|---|
3DFN128G08VS8308 | 16G x 8 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6720 |
3DFN128G16VS8709 | 8G x16 | 3.3V | 25 ns | SOP50 | C, I, M | 3DPA-6990 |
3DFN128G08US8761 | 16G x 8 | 1.8 V | 12 ns | SOP54 | C, I, M | 3DPA-7920 |
Inventor of 3D stacked Electronics for Space
High Quality referential with ISO and Space Agencies Certifications
Our support teams are everywhere you are to ensure your satisfaction
Rugged components able to withstand harsh environments and space radiation effects
Dense, fast, rad hardened, System in Packages, miniaturized
Over 20 years of flight heritage and 190,000 modules in Space