NAND FLASH

Overview

NAND FLASH memories are the highest density memories qualified for space applications. 8Gbit to 128Gbit Radiation Tolerant NAND FLASH stacks are available in a variety of temperature ranges, organized x8 and x16, with a power supply of 3.3V.
Based on a very robust SLC NAND FLASH technology, the Radiation Tolerant NAND FLASH stacks feature endurance of 100K Write/Erase cycles per sector and 10 years data retention time.
The devices are offered with standard SOP footprint for high resistance SMT assembly and for withstanding harsh thermal and mechanical environments.
3D PLUS NAND FLASH products are used for Mass data storage in very high density, Non Volatile and very low power Solid State Data Recorders.

Key Features

Very high density – smallest footprint (more than 85 % space savings in the design)

Non volatile and programmable

100K Write/Erase cycles capability

10 years data retention

Radiation tolerance:

• TID: 60 krad(Si)
• SEL > 62.5 MeV.cm²/mg
• SEU:  1.3 MeV.cm²/mg ; Saturated Cross Section: 2E-10 cm²/bit

Space quality level and large Flight heritage worldwide

No pure tin guarantee (less than 97% tin guarantee)

Very long life time electronics (technology proven for 15 to 18 years missions in space)

Worldwide delivery guarantee

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