High Density NAND Flash PRODUCT OVERVIEW The 3DFN4T16LB1862 and 3DFN8T16LB2821 are advanced NAND Flash memories designed for high-density storage The 3DFN4T16LB1862 offers 4 Tbit of capacity operating as a 1.33
Tbit memory in p-SLC mode with a 16-bit bidirectional data interface compliant with ONFI 4.2
The 3DFN8T16LB2821 provides 8 Tbit of storage 2.67
Tbit in p-SLC mode and features two 4 Tbit banks that share data I/Os while maintaining separate control signals Both devices utilize p-SLC mode and 3D PLUS stacking technology to ensure efficient performance and fast data transfer and are available in a BGA package RADIATION TOLERANCE TID 25 krad(Si)* SEL 62.5
MeV.cm²/mg
SEFF LET threshold 45.8
and ≤ 55 MeV cm²/mg σ sat ≈ 1·10-3 cm²/dev SEU LETth ≤1.5
MeV.cm²/mg
σ sat = 4.10-11
cm²/bit KEY FEATURES p-SLC mode supported ONFI 4.2
compliant Automatic Program and Erase 4 Tbit bank organization 17,792 blocks Page size x8 18,352 bytes 16,384 + 1968 bytes Block size 2112 pages 33,792K + 4059K bytes Plane size 4 planes x 556 blocks Supply voltage Vcc = 2.5
or 3.3
V Vccq= 1.2
V Supporting NV-DDR3 interface up to mode 12 F= 600 MHz Array performance READ page time 40 µs TYP Effecive Program page time 170 µs TYP Erase block time 8 ms TYP Endurance 60,000 in p-SLC mode BLOCK DIAGRAM RADIATION TOLERANCE PACKAGE SCD# TID(1 krad Si SEL(1 MeV.cm²/mg
SEU MeV.cm²/mg
SEU Xsection(2 cm²/bit VOLTAGE V ACCESS / CLOCK DENSITY CONFIG HD NAND FLASH 4 Tbit 256Gx16 3DFN4T16LB1862 8 Tbit 512Gx16 3DFN8T16LB2821 2.35
- 3.6
& 1.2
2.35
- 3.6
& 1.2
BGA 215 3DPA-8371 4·10-11 BGA 215 3DPA-8372 4·10-11 600 MHZ 600 MHZ 25 25 62.5
62.5
1.5
1.5
23 * To be refined