KEY BENEFITS High density & SEE immune non volatile memory Help customers in error management strategy with specific features Small footprint KEY FEATURES 100,000 Program/erase cycles endurance 20 years data retention -55 C to +125 C operating temperature range Embedded ECC RADIATION TOLERANCE TID 100 krad Si SEL LET 85 MeV.cm²/mg
SEU LET 85 MeV.cm²/mg
SET LET 85 MeV.cm²/mg
SEFI LET 85 MeV.cm²/mg
MNEMOSYNE 1.8
V SPI MNEMOSYNE 3.3
V SPI APPLICATIONS FPGA configuration bitstream storage Boot code and program storage for microcontrollers and microprocessors MNEMOSYNE 3.3
V EEPROM PACKAGE SCD# RADIATION TOLERANCE TID(1 krad Si SEL(1 MeV.cm²/mg
SEU MeV.cm²/mg
100 100 100 100 100 85 85 85 85 85 SOP 54 3DPA-8354 SOP 42 3DPA-8338 SOP 42 3DPA-8339 SOP 42 3DDS-0867 SOP 42 3DDS-0867 85 85 85 85(* 85(* VOLTAGE V ACCESS /CLOCK DENSITY CONFIG MNEMOSYNE 3.3
& 1.8
250 ns EEPROM 3DMN128M08VS1852 128 Mbit 3DMN512M08US4853 512 Mbit SPI/QSPI/OSPI 3DMN1G08US8854 1 Gbit SPI/QSPI/OSPI 100 MHz 100 MHz 1.8
1.8
3.3
& 1.8
50 MHz SPI/QSPI 3DMN512M04VS4867 512 Mbit 3.3
& 1.8
50 MHz SPI/QSPI 3DMN1G04VS8868 1 Gbit Temperature C I M *)Frequency dependent 17