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Wafer Level Stack - WDoD™
Overview
Based on the use of standard wafers (die without « TSV »), our patented wafer level stack technology named WDoD™ (Wirefree Die-on-Die) has the unique capability to stack n-High any kind of die (technology process, size and thickness).
This technology allows gaining a factor of 25 to 100 on weight and volume comparing to the other existing 3D Modules.
Thanks to the test and burn-in capability for each layer prior to stacking (Known Good Rebuilt Wafer concept) and stacks parallel manufacturing process, the WDoD™ technology is the most efficient technology for building complex System-In-Packages (SiPs). It enables achieving a combination that cannot be realized with monolithic System-on-Chip (SoC) approaches, and it has a lower development and manufacturing cost, and a faster time to market.
The WDoD™ technology is developed in the frame of internal R&D since 2002. The WDoD™ technology was also core for several associated European projects such as the Eureka/Pidea Program "WALPACK" (20M€, 2002 to 2005) for which 3D Plus received the “LXNX” Award from EUREKA in 2006 in Roma, and the Eureka/Pidea Program "e-CUBES" (12M€, 2006 to 2009).
Height specific patents have been filed for the WDoD™ process. The WDoD™ process flow is referenced as FLOW 3.
FLOW 3 Process Flow Chart
The steps 1 to 6 show the « Known Good Rebuilt Wafer» (2D Process):

The steps 13 to 21 show the stacking of the « Known Good Rebuilt Wafers » (3D Process).

For steps 7 to 12, two options can be used:
- OPTION 1: Only one layer has to be burned-in
- OPTION 2 : Several layers have to be burned-in before stacking, so a subsystem is built with two levels or more and burned-in before stacking with the other layers as in the Package on Package approach (PoP).


| Key Features | Benefits |
|---|---|
| The components are stacked up | Decrease of the volume/weight by 25 to 100 times with regard to the existing 3D modules |
| Ultra small form factor and Low profile | Size of the 3D module after stacking is equal to the size of the larger die plus 100µm around it |
| Stacking of any kind of die (size and thickness) | Best combination of any standard semiconductor devices and technologies that cannot be realized with monolithic SoC approaches More than 1 die per level |
| Use of standard wafers (die without « TSV ») | Die sourcing flexibility Easy access to the industry Cost effectiveness WDoD™ is the only really available Wafer level stacking process |
| Test and burn-in (if necessary) of each level before stacking thanks to the Rebuilt Wafer Concept | Stacking of n levels with excellent yield |
| Parallel processing thanks to the Rebuilt Wafer Concept | Cost effectiveness |
| Use of well proven technologies | Very High reliability High Resistance to harsh environment (thermal, vibrations, …) |
FLOW 3 Products Overview
Known Good Rebuilt wafers (100 µm thickness) using standard wafers
(die without « TSV »)
8 Layers (0.8mm) Memory Stack built with WDoD™ process flow