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Radiation Tolerant Memory

FLASH NAND Product Overview

FLASH NAND

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4Gb to 128Gb Radiation Tolerant FLASH NAND stacks are available in a variety of temperature ranges, organized x8 and with a power supply of 3.3V.
Based on a very robust SLC NAND FLASH technology, the Radiation Tolerant FLASH NAND stacks feature endurance of 100K Write/Erase cycles per sector and 10-years data retention time.
The devices are offered with standard SOP footprint for high resistance SMT assembly and for withstanding harsh thermal and mechanical environments.
3D Plus FLASH NAND products are used for Mass data storage in very high density, Non Volatile and very low power Solid State Data Recorders.

Key Features

  • Very High Density – smallest footprint (more than 85 % space savings in the design)
  • Non volatile and programmable
  • 100K Write/Erase cycles capability
  • 10 years data retention
  • Radiation Tolerance
    • TID: 50 Krads (Si)
    • SEL: 55 Mev.cm2/mg
    • SEU:  <5 MeV-cm2/mg, X-section : 7 E-11cm2/bit
    • SEFI : <5 MeV-cm2/mg, X-section : 1.5 E-5cm2/device
  • Space quality level and large Flight Heritage worldwide
  • No pure Tin Guaranty (less than 97% tin guaranty)
  • Very Long Life Time Electronics (Technology proven for 15 to 18 years missions in Space)
  • Worldwide delivery guarantee

FLASH NAND Lineup