Radiation Tolerant Memory

FLASH NOR Product Overview


FLASH NOR memories enable on-board and in-orbit programming capability for very high density non volatile memories. 64Mb to 256 Mb Radiation Tolerant FLASH NOR stacks are available in a variety of temperature ranges, organized x16 and with a power supply of 3.0V.
The Radiation Tolerant FLASH NOR stacks are bad blocks free FLASH memories, and, feature endurance of 1 Million Write/Erase cycles per sector and 20-years data retention time.
The devices are offered with standard SOP footprint for high resistance SMT assembly and for withstanding harsh thermal and mechanical environments.
3D Plus FLASH NOR products feature high speed asynchronous parallel memory access and are easy to interface with large SRAM based FPGAs for configuration bitstream storage. They are also used for small density Non Volatile Solid State Data Recorders and as processor’s Boot and Program ROM in a variety of high performance computer boards.

Key Features

  • Highest Density – smallest footprint
  • Non volatile and programmable
  • High Speed – 90ns access time
  • Parallel access interface
  • 1 Million Write/Erase cycles capability
  • 20 years data retention
  • Radiation Tolerance
    • TID: 15 Krads (Si)
    • SEL: 47.5 Mev.cm2/mg
    • SEU: 10 MeV-cm2/mg, Saturated X-section: 1E-11 cm2/bit
  • Space quality level and large Flight Heritage worldwide
  • No pure Tin Guaranty (less than 97% tin guaranty)
  • Very Long Life Time Electronics (Technology proven for 15 to 18 years missions in Space)
  • Worldwide delivery guarantee