Radiation Tolerant Memory

EEPROM Product Overview


The Electrically Erasable and Programmable ROM (EEPROM) stacks enable on-board and in-orbit programming capability for the high density non volatile memories. 1Mb to 8 Mb Radiation Tolerant EEPROM stacks are available in a variety of temperature ranges, organized x8, x32, and x40, and, with a power supply of 3.3V or 5V.
Based on the very rugged MNOS memory cell technology, the Radiation Tolerant EEPROM stacks feature endurance of 10 000 Write/Erase cycles and 20-years data retention time.
The devices are offered with standard SOP footprint for high resistance SMT assembly and for withstanding harsh thermal and mechanical environments.
3D Plus EEPROM products are used as processor’s Boot and Program ROM in a variety of high performance computer boards. Our EEPROM products are also widely used for storing the configuration bit streams of large SRAM based FPGAs

Key Features

  • High Density – smallest footprint (more than 85 % space savings in the design)
  • Wide Data bus up to x40
  • Non volatile and programmable
  • Parallel access interface
  • 10 000 Write/Erase cycles capability
  • 20 years data retention
  • Radiation Tolerance
    • TID: 80 Krads (Si)
    • 25 Krad(Si) (Write mode)
    • SEL: 80 Mev.cm2/mg
    • SEU: 80 MeV-cm2/mg (Standby mode),
    • 25 MeV-cm2/mg (Read mode), Saturated X-section: 1E-05 cm2/device (9.5E-12 cm2/bit)
    • 10 MeV-cm2/mg (Write mode), Saturated X-section: 5E-04 cm2/device (4.7E-10 cm2/bit)
  • Space quality level and Very large Flight Heritage worldwide
  • No pure Tin Guaranty (less than 97% tin guaranty)
  • Very Long Life Time Electronics (Technology proven for 15 to 18 years missions in Space)
  • Worldwide delivery guarantee